2N6316

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-66-2

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

80 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

2 V

Maximum DC Collector Current:

15 A

Gain Bandwidth Product fT:

4 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Series:

2N6316

DC Current Gain hFE Max:

100 at 2.5 A, 4 V

Packaging:

Tube

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

20 at 500 mA, 4 V

Pd - Power Dissipation:

90 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

30

Subcategory:

Transistors

Part # Aliases:

2N6316 PBFREE

Unit Weight:

0.206000 oz

Tags

2N631, 2N63, 2N6