W632GU8AB-11

W632GU8AB-11
Mfr. #:
W632GU8AB-11
Manufacturer:
Winbond Electronics
Description:
IC DRAM 2G PARALLEL 933MHZ
Lifecycle:
New from this manufacturer.
Datasheet:
W632GU8AB-11 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
W632GU8, W632GU, W632G, W632, W63
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**v
    E**v
    RO

    product as described

    2019-06-20
    P***v
    P***v
    RU

    I recommend

    2019-05-17
    Y***O
    Y***O
    RU

    Ok,recommended seller,thanks !!!

    2019-05-05
***i-Key
IC DRAM 2G PARALLEL 933MHZ
Part # Mfg. Description Stock Price
W632GU8AB-11
DISTI # W632GU8AB-11-ND
Winbond Electronics CorpIC DRAM 2G PARALLEL 933MHZ
RoHS: Compliant
Container: Tray
Limited Supply - Call
    Image Part # Description
    W632GU8NB-09

    Mfr.#: W632GU8NB-09

    OMO.#: OMO-W632GU8NB-09

    DRAM 2G DDR3L 1.35V SDRAM, x8, 1066MHz
    W632GU6NB12I TR

    Mfr.#: W632GU6NB12I TR

    OMO.#: OMO-W632GU6NB12I-TR

    DRAM 2G DDR3L 1.35V SDRAM, x16, Industrial Temp. 800MHz T&R
    W632GU8NB09I TR

    Mfr.#: W632GU8NB09I TR

    OMO.#: OMO-W632GU8NB09I-TR

    DRAM 2G DDR3L 1.35V SDRAM, x8, 1066MHz, Industrial Temp T&R
    W632GU6MB-12

    Mfr.#: W632GU6MB-12

    OMO.#: OMO-W632GU6MB-12

    DRAM 2G DDR3L 1.35V SDRAM, x16, 800MHz
    W632GU8NB-11

    Mfr.#: W632GU8NB-11

    OMO.#: OMO-W632GU8NB-11

    DRAM 2G DDR3L 1.35V SDRAM, x8, 933MHz
    W632GU6MB11I

    Mfr.#: W632GU6MB11I

    OMO.#: OMO-W632GU6MB11I-WINBOND-ELECTRONICS

    IC DRAM 2G PARALLEL 933MHZ
    W632GU6MB15J

    Mfr.#: W632GU6MB15J

    OMO.#: OMO-W632GU6MB15J-230

    IC SDRAM DDR3L 2G 96WBGA
    W632GU8MB-09

    Mfr.#: W632GU8MB-09

    OMO.#: OMO-W632GU8MB-09-230

    IC SDRAM DDR3L 2G 78WBGA
    W632GU8NB12I

    Mfr.#: W632GU8NB12I

    OMO.#: OMO-W632GU8NB12I-1190

    2G bits DDR3L SDRAM
    W632GU6KB-15

    Mfr.#: W632GU6KB-15

    OMO.#: OMO-W632GU6KB-15-WINBOND-ELECTRONICS

    IC DRAM 2G PARALLEL 96WBGA
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of W632GU8AB-11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    Start with
    Newest Products
    • W29N SLC NAND Flash Memory
      Winbond’s SLC NAND Flash products are direct drop-in replacements to the ONFi SLC NAND products available in the industry from different suppliers and the products are compatible.
    • SZV Series Capacitors
      With 1,000 hour life span at 105°C, Rubycon’s SZV series is designed for applications requiring long-life durability.
    • Portable High Efficiency Solar Charger and LED Lig
      Equipped with two USB ports, one micro-USB port, and four white LED lights, and produces 5.2 V of power at 1.5 A, which is about 8 watts of solar power.
    • TLP577x Optocouplers
      Toshiba’s TLP5771, TLP5772, and TLP5774 optocouplers low threshold input current drive; rail-to-rail output gate driver optocouplers increase overall system efficiency.
    • DIMENSION CP10 Series DIN Rail Power Supplies
      The PULS DIMENSION CP10 series power supplies are characterised by an advanced inrush current limitation and high efficiency values.
    Top