2N5785

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

65 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

750 mV

Maximum DC Collector Current:

1.2 A

Gain Bandwidth Product fT:

1 MHz

Series:

2N5785

DC Current Gain hFE Max:

100

Height:

6.6 mm

Length:

9.4 mm

Packaging:

Bulk

Width:

9.4 mm

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

20 at 1.2 A, 2 V

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

500

Subcategory:

Transistors

Part # Aliases:

2N5785 PBFREE

Tags

2N578, 2N57, 2N5