FQA11N90-F109

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3PN-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

900 V

Id - Continuous Drain Current:

11.4 A

Rds On - Drain-Source Resistance:

960 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

QFET

Packaging:

Tube

Height:

20.1 mm

Length:

16.2 mm

Series:

FQA11N90_F109

Transistor Type:

1 N-Channel

Width:

5 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

90 ns

Product Type:

MOSFET

Rise Time:

135 ns

Factory Pack Quantity:

450

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

165 ns

Typical Turn-On Delay Time:

65 ns

Part # Aliases:

FQA11N90_F109

Unit Weight:

0.225789 oz

Tags

FQA11N, FQA11, FQA1, FQA