2N5786

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

T

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

NPN

Collector- Emitter Voltage VCEO Max:

40 V

Collector- Base Voltage VCBO:

45 V

Emitter- Base Voltage VEBO:

3.5 V

Collector-Emitter Saturation Voltage:

1 V

Maximum DC Collector Current:

3.5 A

Gain Bandwidth Product fT:

4 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Series:

2N5786

DC Current Gain hFE Max:

120

Packaging:

Bulk

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

4 at 1.6 A, 2 V

Pd - Power Dissipation:

10000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

500

Subcategory:

Transistors

Part # Aliases:

2N5786 TIN/LEAD

Tags

2N5786, 2N578, 2N57, 2N5