TSM260P02CX RFG

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

6.5 A

Rds On - Drain-Source Resistance:

21 mOhms

Vgs th - Gate-Source Threshold Voltage:

300 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

19.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.56 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

P-Channel Power MOSFET

Brand:

Taiwan Semiconductor

Forward Transconductance - Min:

15 S

Fall Time:

24.6 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

37.5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

89.1 ns

Typical Turn-On Delay Time:

10.4 ns

Tags

TSM260, TSM26, TSM2, TSM