Si4434ADY-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

250 V

Id - Continuous Drain Current:

4.1 A

Rds On - Drain-Source Resistance:

150 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

10.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

6 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

10 S

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

22 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18 ns

Typical Turn-On Delay Time:

8 ns

Tags

SI4434, SI443, SI44, SI4