DMN53D0LW-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-323-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

50 V

Id - Continuous Drain Current:

360 mA

Rds On - Drain-Source Resistance:

2 Ohms

Vgs th - Gate-Source Threshold Voltage:

800 mV

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

1.2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

420 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN53

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

80 mS

Fall Time:

11 ns

Product Type:

MOSFET

Rise Time:

2.5 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18.9 ns

Typical Turn-On Delay Time:

2.7 ns

Unit Weight:

0.000176 oz

Tags

DMN53D0L, DMN53, DMN5, DMN