BSS314PE H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

1.5 A

Rds On - Drain-Source Resistance:

107 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

- 2.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Series:

BSS314

Transistor Type:

1 P-Channel

Width:

1.3 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

3 S

Fall Time:

2.8 ns

Product Type:

MOSFET

Rise Time:

3.9 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12.4 ns

Typical Turn-On Delay Time:

5.1 ns

Part # Aliases:

BSS314PEH6327XT BSS314PEH6327XTSA1 SP000928944

Unit Weight:

0.000282 oz

Tags

BSS314PEH, BSS314PE, BSS314, BSS31, BSS3, BSS