TK10A80E,S4X

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220FP-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

700 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

46 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

50 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

DTMOSIV

Height:

15 mm

Length:

10 mm

Series:

TK10A80E

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Toshiba

Fall Time:

35 ns

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

140 ns

Typical Turn-On Delay Time:

80 ns

Unit Weight:

0.211644 oz

Tags

TK10A80E,S, TK10A80E, TK10A8, TK10A, TK10, TK1