SIHF530-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220AB-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

14 A

Rds On - Drain-Source Resistance:

160 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

26 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

88 W

Configuration:

Single

Channel Mode:

Enhancement

Height:

15.49 mm

Length:

10.41 mm

Series:

SIH

Transistor Type:

1 N-Channel

Width:

4.7 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

5.1 S

Fall Time:

24 ns

Product Type:

MOSFET

Rise Time:

34 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

23 ns

Typical Turn-On Delay Time:

10 ns

Tags

SIHF53, SIHF5, SIHF, SIH