ZXMN6A08GTA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

5.3 A

Rds On - Drain-Source Resistance:

80 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

5.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.9 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.65 mm

Length:

6.7 mm

Series:

ZXMN6A

Transistor Type:

1 N-Channel

Width:

3.7 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

6.6 S

Fall Time:

4.6 ns

Product Type:

MOSFET

Rise Time:

2.1 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12.3 ns

Typical Turn-On Delay Time:

2.6 ns

Unit Weight:

0.003951 oz

Tags

ZXMN6A08G, ZXMN6A08, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM