IXTQ30N50L2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

30 A

Rds On - Drain-Source Resistance:

200 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

240 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

400 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

Linear L2

Packaging:

Tube

Height:

20.3 mm

Length:

15.8 mm

Series:

IXTQ30N50

Transistor Type:

1 N-Channel

Type:

Linear L2 Power MOSFET

Width:

4.9 mm

Brand:

IXYS

Forward Transconductance - Min:

9 S

Fall Time:

40 ns

Product Type:

MOSFET

Rise Time:

117 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

94 ns

Typical Turn-On Delay Time:

35 ns

Unit Weight:

0.194007 oz

Tags

IXTQ30N5, IXTQ30, IXTQ3, IXTQ, IXT