DMN3024LSS-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

8.5 A

Rds On - Drain-Source Resistance:

24 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

12.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.6 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Product:

MOSFET Small Signal

Series:

DMN3024

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

16.5 S

Fall Time:

8 ns

Product Type:

MOSFET

Rise Time:

3.3 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16 ns

Typical Turn-On Delay Time:

2.9 ns

Unit Weight:

0.002610 oz

Tags

DMN3024LSS, DMN3024LS, DMN3024L, DMN3024, DMN302, DMN30, DMN3, DMN