DMTH10H025LK3Q-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

51.7 A

Rds On - Drain-Source Resistance:

22 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

21 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

100 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Series:

DMTH10H025

Brand:

Diodes Incorporated

Fall Time:

8.2 ns

Product Type:

MOSFET

Rise Time:

9.4 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16.7 ns

Typical Turn-On Delay Time:

6.3 ns

Unit Weight:

0.011640 oz

Tags

DMTH10H025L, DMTH10H02, DMTH1, DMTH, DMT