TPN4R712MD,L1Q

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSON Advance-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

36 A

Rds On - Drain-Source Resistance:

4.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

500 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

65 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

42 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.85 mm

Length:

3.1 mm

Series:

TPN4R712MD

Transistor Type:

1 P-Channel

Width:

3.1 mm

Brand:

Toshiba

Fall Time:

145 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

443 ns

Typical Turn-On Delay Time:

18 ns

Unit Weight:

0.000705 oz

Tags

TPN4R712M, TPN4R7, TPN4, TPN