BSC016N06NSATMA1

BSC016N06NSATMA1
Mfr. #:
BSC016N06NSATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 60V 100A DSON-8 OptiMOS
ライフサイクル:
メーカー新製品
データシート:
BSC016N06NSATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSC016N06NSATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
100 A
Rds On-ドレイン-ソース抵抗:
1.4 mOhms
Vgs th-ゲート-ソースしきい値電圧:
1.2 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
95 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
139 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.27 mm
長さ:
5.9 mm
シリーズ:
OptiMOS 5
トランジスタタイプ:
1 N-Channel
幅:
5.15 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
70 S
立ち下がり時間:
9 ns
製品タイプ:
MOSFET
立ち上がり時間:
9 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
35 ns
典型的なターンオン遅延時間:
19 ns
パーツ番号エイリアス:
BSC016N06NS BSC16N6NSXT SP000924882
単位重量:
0.007055 oz
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 1.6 mOhm 71 nC OptiMOS™ Power Mosfet - TDSON-8 FL
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin D2PAK T/R - Tape and Reel
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 160 A, 60 V, 3.3 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 160A; 4.2 MOHM; 85 NC QG; D2-PAK; Pb-Free
***C
Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***icontronic
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ
***Yang
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
*** Electronics
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B
***ure Electronics
Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
N-Channel 60 V 6.5 mO Surface Mount STripFET™ F6 Power Mosfet - TO-252
***icroelectronics
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package
***el Electronic
NXP MCIMX535DVV1C MPU, CORTEX-A8, I.MX53, R2.1, 529BGA
***icroelectronics SCT
Automotive Power Discrete, 60V, 80A, DPAK, Tape and Reel
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
モデル メーカー 説明 ストック 価格
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
10000In Stock
  • 5000:$1.0010
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.8059
  • 10000:$0.7769
  • 20000:$0.7489
  • 30000:$0.7239
  • 50000:$0.7109
BSC016N06NSATMA1
DISTI # BSC016N06NS
Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC016N06NSATMA1
    DISTI # 79X1327
    Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$2.0600
    • 10:$1.7700
    • 25:$1.6700
    • 50:$1.5600
    • 100:$1.4600
    • 250:$1.3500
    • 500:$1.3000
    • 1000:$1.2600
    BSC016N06NSATMA1.
    DISTI # 27AC1071
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.8060
    • 10000:$0.7770
    • 20000:$0.7490
    • 30000:$0.7240
    • 50000:$0.7110
    BSC016N06NS
    DISTI # 726-BSC016N06NS
    Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant
    143
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 726-BSC016N06NSATMA1
    Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant
    0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 2432702
    Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant
    0
    • 1:£1.8900
    • 10:£1.4900
    • 100:£1.2000
    • 250:£1.1200
    • 500:£1.1000
    BSC016N06NSATMA1
    DISTI # 2432702
    Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant
    0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    BSC016N06NSATMA1
    DISTI # 2432702RL
    Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant
    0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    画像 モデル 説明
    LTM4619EV#PBF

    Mfr.#: LTM4619EV#PBF

    OMO.#: OMO-LTM4619EV-PBF

    Switching Voltage Regulators Dual 26V, 4A Step-down Module Regulator with Tracking
    LT1952EGN-1#PBF

    Mfr.#: LT1952EGN-1#PBF

    OMO.#: OMO-LT1952EGN-1-PBF

    Switching Voltage Regulators 1x Switch Sync For Cntr
    LTM8045EY#PBF

    Mfr.#: LTM8045EY#PBF

    OMO.#: OMO-LTM8045EY-PBF

    Switching Voltage Regulators Inverting or SEPIC Module DC/DC Converter with Up to 700mA Output Current
    MAMK2520TR68M

    Mfr.#: MAMK2520TR68M

    OMO.#: OMO-MAMK2520TR68M

    Fixed Inductors 1008 .68uH 48mOhms +/-20%Tol 3.2A HiCur
    ADT7470ARQZ

    Mfr.#: ADT7470ARQZ

    OMO.#: OMO-ADT7470ARQZ

    Board Mount Temperature Sensors Hub & Fan Controller
    QPI-11LZ-01

    Mfr.#: QPI-11LZ-01

    OMO.#: OMO-QPI-11LZ-01-VICOR

    EMI FILTER VI CHIP 50V 7A LGA
    06032U3R3BAT2A

    Mfr.#: 06032U3R3BAT2A

    OMO.#: OMO-06032U3R3BAT2A-AVX

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 200volts 3.3pF ULTRA LOW ESR
    MAMK2520TR68M

    Mfr.#: MAMK2520TR68M

    OMO.#: OMO-MAMK2520TR68M-TAIYO-YUDEN

    Fixed Inductors INDCTR SMD HI CURR MTL CORE 0.68uH 20%
    MCS1632R015FER

    Mfr.#: MCS1632R015FER

    OMO.#: OMO-MCS1632R015FER-OHMITE

    Current Sense Resistors - SMD 1W 0.015 ohm 1%
    ADT7470ARQZ

    Mfr.#: ADT7470ARQZ

    OMO.#: OMO-ADT7470ARQZ-ANALOG-DEVICES

    Board Mount Temperature Sensors Hub & Fan Controlle
    可用性
    ストック:
    17
    注文中:
    2000
    数量を入力してください:
    BSC016N06NSATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.06
    $2.06
    10
    $1.75
    $17.50
    100
    $1.40
    $140.00
    500
    $1.22
    $610.00
    1000
    $1.01
    $1 010.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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