STP90N55F4

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

90 A

Rds On - Drain-Source Resistance:

6.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

90 nC

Pd - Power Dissipation:

150 W

Configuration:

Single

Packaging:

Tube

Series:

STP90N55F4

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

30 ns

Product Type:

MOSFET

Rise Time:

60 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

20 ns

Unit Weight:

0.011640 oz

Tags

STP90, STP9, STP