STB80NF55-06-1

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

6.5 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

STripFET

Packaging:

Tube

Height:

8.95 mm

Length:

10 mm

Series:

STB80NF55-06-1

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

STMicroelectronics

Fall Time:

65 ns

Product Type:

MOSFET

Rise Time:

155 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

125 ns

Typical Turn-On Delay Time:

27 ns

Unit Weight:

0.050717 oz

Tags

STB80NF55-06, STB80NF55-0, STB80NF55, STB80NF5, STB80NF, STB80N, STB80, STB8, STB