IRF5803D2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

3.4 A

Rds On - Drain-Source Resistance:

190 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

25 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 P-Channel

Type:

FETKY MOSFET & Schottky Diode

Width:

3.9 mm

Brand:

Infineon / IR

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

550 ns

Factory Pack Quantity:

95

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

88 ns

Typical Turn-On Delay Time:

43 ns

Part # Aliases:

SP001554058

Unit Weight:

0.019048 oz

Tags

IRF5803D2, IRF5803D, IRF5803, IRF580, IRF58, IRF5, IRF