ZTX1055A

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

120 V

Collector- Base Voltage VCBO:

175 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

3 A

Gain Bandwidth Product fT:

130 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

275 at 10 mA, 10 V

Height:

4.01 mm

Length:

4.77 mm

Packaging:

Bulk

Width:

2.41 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

3 A

DC Collector/Base Gain hfe Min:

275 at 10 mA, 10 V, 300 at 1 A, 10 V, 50 at 3 A, 10 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

4000

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

ZTX105, ZTX10, ZTX1, ZTX