2N7002H-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

210 mA

Rds On - Drain-Source Resistance:

7.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

5 V

Qg - Gate Charge:

352 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

510 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

2N7002H

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

4.7 ns

Product Type:

MOSFET

Rise Time:

2.9 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

8.4 ns

Typical Turn-On Delay Time:

3.7 ns

Unit Weight:

0.000282 oz

Tags

2N7002H, 2N7002, 2N700, 2N70, 2N7