SIHA4N80E-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

4.3 A

Rds On - Drain-Source Resistance:

1.1 Ohms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

16 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

69 W

Configuration:

Single

Channel Mode:

Enhancement

Series:

E

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

1.5 S

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

7 ns

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26 ns

Typical Turn-On Delay Time:

12 ns

Tags

SIHA, SIH