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STGPL6NC60DI

STGPL6NC60DI
Mfr. #:
STGPL6NC60DI
メーカー:
STMicroelectronics
説明:
IGBT Transistors 600 V - 6 A Hyper fast IGBT
ライフサイクル:
メーカー新製品
データシート:
STGPL6NC60DI データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
STGPL6NC60DI 詳しくは STGPL6NC60DI Product Details
製品属性
属性値
メーカー：
STMicroelectronics
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-220-3
取り付けスタイル：
スルーホール
コレクター-エミッター電圧VCEOMax：
600 V
コレクター-エミッター飽和電圧：
1.9 V
最大ゲートエミッタ電圧：
20 V
25℃での連続コレクタ電流：
14 A
Pd-消費電力：
56 W
シリーズ：
STGPL6NC60DI
包装：
チューブ
ブランド：
STMicroelectronics
ゲートエミッタリーク電流：
100 nA
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
1000
サブカテゴリ：
IGBT
単位重量：
0.081130 oz
Tags
STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***SIT Distribution GmbH
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***nell
IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ment14 APAC
IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
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***r Electronics
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ical
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***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***p One Stop
Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP™ - TO-220FP
***ineon SCT
600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;
***nell
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
モデル メーカー 説明 ストック 価格
STGPL6NC60DI
DISTI # 497-10072-5-ND		STMicroelectronicsIGBT 600V 14A 56W TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.8633
STGPL6NC60DI
DISTI # STGPL6NC60DI		STMicroelectronicsTrans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGPL6NC60DI)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8499
  • 2000:$0.8099
  • 4000:$0.7729
  • 6000:$0.7389
  • 10000:$0.7239
STGPL6NC60DI
DISTI # STGPL6NC60DI		STMicroelectronicsTrans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube (Alt: STGPL6NC60DI)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
    STGPL6NC60DI
    DISTI # 511-STGPL6NC60DI    		STMicroelectronicsIGBT Transistors 600 V - 6 A Hyper fast IGBT
    RoHS: Compliant    		0
    • 1:$1.6700
    • 10:$1.4200
    • 100:$1.1400
    • 500:$0.9930
    • 1000:$0.8230
    画像 モデル 説明
    FAN7382MX

    Mfr.#: FAN7382MX

    OMO.#: OMO-FAN7382MX

    		 Gate Drivers Half Bridge Gate Dvr
    NCP5106ADR2G

    Mfr.#: NCP5106ADR2G

    OMO.#: OMO-NCP5106ADR2G

    		 Gate Drivers HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR
    IRS2103STRPBF

    Mfr.#: IRS2103STRPBF

    OMO.#: OMO-IRS2103STRPBF

    		 Gate Drivers Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns
    STGF10NC60KD

    Mfr.#: STGF10NC60KD

    OMO.#: OMO-STGF10NC60KD

    		 IGBT Transistors PowerMESH&#34 IGBT
    STGP10NC60KD

    Mfr.#: STGP10NC60KD

    OMO.#: OMO-STGP10NC60KD

    		 IGBT Transistors PowerMESH&#34 IGBT
    STF11N60DM2

    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2

    		 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
    IRS2103STRPBF

    Mfr.#: IRS2103STRPBF

    OMO.#: OMO-IRS2103STRPBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns
    STGP10NC60KD

    Mfr.#: STGP10NC60KD

    OMO.#: OMO-STGP10NC60KD-STMICROELECTRONICS

    		 IGBT 600V 20A 65W TO220
    STGF10NC60KD

    Mfr.#: STGF10NC60KD

    OMO.#: OMO-STGF10NC60KD-STMICROELECTRONICS

    		 IGBT 600V 9A 25W TO220FP
    STF11N60DM2

    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2-STMICROELECTRONICS

    		 N-CHANNEL 600 V, 0.26 OHM TYP.,
    可用性
    ストック:
    996
    注文中:
    2979
    数量を入力してください:
    STGPL6NC60DIの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $1.66
    $1.66
    10
    $1.41
    $14.10
    100
    $1.13
    $113.00
    500
    $0.99
    $496.50
    1000
    $0.82
    $823.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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