STB10LN80K5

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

8 A

Rds On - Drain-Source Resistance:

550 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

15 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

MDmesh

Packaging:

Reel

Series:

STB10LN80K5

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28 ns

Typical Turn-On Delay Time:

11.8 ns

Unit Weight:

0.077603 oz

Tags

STB10, STB1, STB