MRF5S19150HR5

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

65 V

Gain:

14 dB

Output Power:

32 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

NI-880-3

Packaging:

Reel

Configuration:

Single

Height:

5.08 mm

Length:

34.16 mm

Operating Frequency:

1.9 GHz to 2 GHz

Type:

RF Power MOSFET

Width:

13.8 mm

Brand:

NXP / Freescale

Channel Mode:

Enhancement

Pd - Power Dissipation:

427 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 0.5 V, 15 V

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Unit Weight:

0.343346 oz

Tags

MRF5S19150H, MRF5S1915, MRF5S191, MRF5S19, MRF5S1, MRF5S, MRF5, MRF