MMIX1T550N055T2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SMPD-24

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

550 A

Rds On - Drain-Source Resistance:

1.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.8 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

595 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

830 W

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

5.7 mm

Length:

25.25 mm

Series:

MMIX1T550N055

Type:

TrenchT2 GigaMOS Power MOSFET

Width:

23.25 mm

Brand:

IXYS

Forward Transconductance - Min:

90 S

Fall Time:

230 ns

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

20

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

90 ns

Typical Turn-On Delay Time:

45 ns

Tags

MMIX1T, MMIX1, MMIX, MMI