IPP80R360P7XKSA1

IPP80R360P7XKSA1
Mfr. #:
IPP80R360P7XKSA1
メーカー:
Infineon Technologies
説明:
MOSFET
ライフサイクル:
メーカー新製品
データシート:
IPP80R360P7XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPP80R360P7XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
PG-TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
800 V
Id-連続ドレイン電流:
13 A
Rds On-ドレイン-ソース抵抗:
310 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.5 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
30 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
84 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
シリーズ:
CoolMOS P7
トランジスタタイプ:
1 N-Channel
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
6 ns
製品タイプ:
MOSFET
立ち上がり時間:
6 ns
ファクトリーパックの数量:
500
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
40 ns
典型的なターンオン遅延時間:
10 ns
パーツ番号エイリアス:
IPP80R360P7 SP001633518
Tags
IPP80R, IPP80, IPP8, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 360 mOhm 30 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 800V 13A 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH 800V 13A TO220-3
***ronik
N-CH 800V 13A 360mOhm TO220-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 13A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 13A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:84W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 13A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.31ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:84W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
モデル メーカー 説明 ストック 価格
IPP80R360P7XKSA1
DISTI # V36:1790_18195652
Infineon Technologies AGIPP80R360P7XKSA10
    IPP80R360P7XKSA1
    DISTI # IPP80R360P7XKSA1-ND
    Infineon Technologies AGMOSFET N-CH 800V 13A TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    167In Stock
    • 1000:$1.2795
    • 500:$1.5442
    • 100:$1.9854
    • 10:$2.4710
    • 1:$2.7400
    IPP80R360P7XKSA1
    DISTI # SP001633518
    Infineon Technologies AGLOW POWER_NEW (Alt: SP001633518)
    RoHS: Compliant
    Min Qty: 1
    Europe - 1000
    • 1:€1.3359
    • 10:€1.2139
    • 25:€1.1129
    • 50:€1.0679
    • 100:€1.0269
    • 500:€0.9889
    • 1000:€0.9539
    IPP80R360P7XKSA1
    DISTI # IPP80R360P7XKSA1
    Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPP80R360P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 500:$1.1549
    • 1000:$1.1139
    • 2000:$1.0729
    • 3000:$1.0369
    • 5000:$1.0189
    IPP80R360P7XKSA1
    DISTI # 24AC9050
    Infineon Technologies AGMOSFET, N-CH, 800V, 13A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes364
    • 5000:$1.0400
    • 2500:$1.0800
    • 1000:$1.1600
    • 500:$1.4000
    • 100:$1.6000
    • 10:$2.0000
    • 1:$2.3600
    IPP80R360P7XKSA1
    DISTI # 726-IPP80R360P7XKSA1
    Infineon Technologies AGMOSFET
    RoHS: Compliant
    25
    • 1:$2.3600
    • 10:$2.0000
    • 100:$1.6000
    • 500:$1.4000
    • 1000:$1.1600
    • 2500:$1.0800
    • 5000:$1.0400
    IPP80R360P7XKSA1
    DISTI # 2771328
    Infineon Technologies AGMOSFET, N-CH, 800V, 13A, TO-220
    RoHS: Compliant
    389
    • 500:£1.1000
    • 250:£1.1800
    • 100:£1.2500
    • 10:£1.5800
    • 1:£2.1000
    IPP80R360P7XKSA1
    DISTI # 2771328
    Infineon Technologies AGMOSFET, N-CH, 800V, 13A, TO-220
    RoHS: Compliant
    364
    • 1000:$1.9100
    • 500:$2.3000
    • 100:$2.9500
    • 10:$3.6700
    • 1:$4.0700
    IPP80R360P7XKSA1
    DISTI # XSKDRABV0021264
    Infineon Technologies AG 
    RoHS: Compliant
    1500 in Stock0 on Order
    • 1500:$1.6800
    • 500:$1.8000
    画像 モデル 説明
    LR8N8-G

    Mfr.#: LR8N8-G

    OMO.#: OMO-LR8N8-G

    Linear Voltage Regulators Hi In V Adj 3 Termnl
    LM5020MM-1/NOPB

    Mfr.#: LM5020MM-1/NOPB

    OMO.#: OMO-LM5020MM-1-NOPB

    Switching Controllers 100V SGL ENDED PWM CONTROLLER
    STM32F469I-DISCO

    Mfr.#: STM32F469I-DISCO

    OMO.#: OMO-STM32F469I-DISCO

    Development Boards & Kits - ARM Discovery kit with STM32F469NI MCU
    12062C223KAT2A

    Mfr.#: 12062C223KAT2A

    OMO.#: OMO-12062C223KAT2A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 200V .022uF X7R 1206 10%
    BBB01-SC-505

    Mfr.#: BBB01-SC-505

    OMO.#: OMO-BBB01-SC-505

    Single Board Computers Beaglebone Black Rev C
    ESP32-WROOM-32U

    Mfr.#: ESP32-WROOM-32U

    OMO.#: OMO-ESP32-WROOM-32U

    WiFi Modules (802.11) SMD Module, ESP32-D0WD, 32Mbits SPI flash, UART mode,
    ESP32-WROOM-32U

    Mfr.#: ESP32-WROOM-32U

    OMO.#: OMO-ESP32-WROOM-32U-ESPRESSIF-SYSTEMS

    WIFI MODULE 32MBITS SPI FLASH
    STM32F407G-DISC1

    Mfr.#: STM32F407G-DISC1

    OMO.#: OMO-STM32F407G-DISC1-STMICROELECTRONICS

    STM32F407VGT6 Microcontroller Development Kit 192KB RAM 1MB Flash Win 7/Win 8/Win XP OS
    STM32F469I-DISCO

    Mfr.#: STM32F469I-DISCO

    OMO.#: OMO-STM32F469I-DISCO-STMICROELECTRONICS

    STM32F469I Microcontroller Development Kit 16.332MB RAM 18MB Flash/NOR Flash Win 7/Win 8/Win XP OS
    LR8N8-G

    Mfr.#: LR8N8-G

    OMO.#: OMO-LR8N8-G-MICROCHIP-TECHNOLOGY

    IC REG LIN POS ADJ 10MA TO243AA
    可用性
    ストック:
    Available
    注文中:
    1990
    数量を入力してください:
    IPP80R360P7XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.36
    $2.36
    10
    $2.00
    $20.00
    100
    $1.60
    $160.00
    500
    $1.40
    $700.00
    1000
    $1.16
    $1 160.00
    2500
    $1.08
    $2 700.00
    5000
    $1.04
    $5 200.00
    10000
    $1.00
    $10 000.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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