IXTP1N120P

IXTP1N120P
Mfr. #:
IXTP1N120P
メーカー:
Littelfuse
説明:
MOSFET 1 Amps 1200V 20 Rds
ライフサイクル:
メーカー新製品
データシート:
IXTP1N120P データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP1N120P DatasheetIXTP1N120P Datasheet (P4)
ECAD Model:
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
1.2 kV
Id-連続ドレイン電流:
1 A
Rds On-ドレイン-ソース抵抗:
20 Ohms
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
63 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
高さ:
9.15 mm
長さ:
10.66 mm
シリーズ:
IXTP1N120
トランジスタタイプ:
1 N-Channel
幅:
4.82 mm
ブランド:
IXYS
立ち下がり時間:
27 ns
製品タイプ:
MOSFET
立ち上がり時間:
28 ns
ファクトリーパックの数量:
50
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
54 ns
典型的なターンオン遅延時間:
20 ns
単位重量:
0.081130 oz
Tags
IXTP1N1, IXTP1N, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
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***trelec
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*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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モデル メーカー 説明 ストック 価格
IXTP1N120P
DISTI # IXTP1N120P-ND
IXYS CorporationMOSFET N-CH 1200V 1A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.9700
IXTP1N120P
DISTI # 747-IXTP1N120P
IXYS CorporationMOSFET 1 Amps 1200V 20 Rds
RoHS: Compliant
519
  • 1:$3.8600
  • 10:$3.4500
  • 25:$3.0000
  • 50:$2.9400
  • 100:$2.8300
  • 250:$2.4200
  • 500:$2.2900
  • 1000:$1.9300
  • 2500:$1.6600
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MOSFET 12 Amps 500V 0.5 Ohm Rds
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Mfr.#: IXTP120N04T2

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Mfr.#: IXTP1R6N50D2

OMO.#: OMO-IXTP1R6N50D2-IXYS-CORPORATION

MOSFET N-CH MOSFETS (D2) 500V 1.6A
IXTP120N075T2

Mfr.#: IXTP120N075T2

OMO.#: OMO-IXTP120N075T2-IXYS-CORPORATION

IGBT Transistors MOSFET 120 Amps 75V
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OMO.#: OMO-IXTP110N055T2-IXYS-CORPORATION

IGBT Transistors MOSFET 110 Amps 55V 0.0066 Rds
可用性
ストック:
519
注文中:
2502
数量を入力してください:
IXTP1N120Pの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$3.86
$3.86
10
$3.45
$34.50
25
$3.00
$75.00
50
$2.94
$147.00
100
$2.83
$283.00
250
$2.42
$605.00
500
$2.29
$1 145.00
1000
$1.93
$1 930.00
2500
$1.66
$4 150.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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