BD239C vs BD239CTU vs BD239C-S

 
PartNumberBD239CBD239CTUBD239C-S
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Epitaxial SilTRANS NPN 100V 2A
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V100 V-
Collector Base Voltage VCBO115 V--
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.7 V700 mV-
Maximum DC Collector Current2 A2 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBD239CBD239C-
Height9.4 mm9.4 mm-
Length10.1 mm10.1 mm-
PackagingBulkTube-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current2 A2 A-
DC Collector/Base Gain hfe Min1515-
Pd Power Dissipation30 W30 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity12001000-
SubcategoryTransistorsTransistors-
Unit Weight0.063493 oz0.063493 oz-
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