 | |  | |
| PartNumber | IRF7307 | IRF7307QF | IRF7307PBF |
| Description | MOSFET DUAL N/P-CH 20V 5.7A/4.7A SOIC8, EA | IGBT Transistors MOSFET 20V DUAL N / P CH 12V VGS MAX | |
| Manufacturer | IOR | - | Infineon Technologies |
| Product Category | FETs - Arrays | - | FETs - Arrays |
| Series | - | - | HEXFETR |
| Packaging | - | - | Tube Alternate Packaging |
| Unit Weight | - | - | 0.019048 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | 8-SO |
| Configuration | - | - | Dual Dual Drain |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 2W |
| Transistor Type | - | - | 1 N-Channel 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 660pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 5.2A, 4.3A |
| Rds On Max Id Vgs | - | - | 50 mOhm @ 2.6A, 4.5V |
| Vgs th Max Id | - | - | 700mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 20nC @ 4.5V |
| Pd Power Dissipation | - | - | 1.4 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 51 ns 33 ns |
| Rise Time | - | - | 42 ns 26 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 4.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 50 mOhms |
| Transistor Polarity | - | - | N-Channel P-Channel |
| Typical Turn Off Delay Time | - | - | 32 ns 51 ns |
| Typical Turn On Delay Time | - | - | 9 ns 8.4 ns |
| Qg Gate Charge | - | - | 13.3 nC |
| Channel Mode | - | - | Enhancement |