IRLR8743TRPBF vs IRLR8743TRPB vs IRLR8743TRPBF-CUT TAPE

 
PartNumberIRLR8743TRPBFIRLR8743TRPBIRLR8743TRPBF-CUT TAPE
DescriptionMOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current160 A--
Rds On Drain Source Resistance3.9 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Pd Power Dissipation135 W--
ConfigurationSingle--
PackagingReelDigi-ReelR Alternate Packaging-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Part # AliasesSP001552904--
Unit Weight0.139332 oz0.139332 oz-
Series-HEXFETR-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-D-Pak-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-135W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-4880pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-160A (Tc)-
Rds On Max Id Vgs-3.1 mOhm @ 25A, 10V-
Vgs th Max Id-2.35V @ 100μA-
Gate Charge Qg Vgs-59nC @ 4.5V-
Pd Power Dissipation-135 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-160 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-3.9 mOhms-
Qg Gate Charge-39 nC-
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