 |  | | |
| PartNumber | PGA26E19BA | PGA26E19-DB001 | PGA26E19-SWEVB008 |
| Description | MOSFET MOSFET 600VDC 190mohm X-GaN | ||
| Manufacturer | Panasonic | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | GaN | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | X-GaN | - | - |
| Series | PGA26E19BA | - | - |
| Brand | Panasonic | - | - |
| Fall Time | 2.4 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.2 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 3.4 ns | - | - |
| Typical Turn On Delay Time | 3.4 ns | - | - |