SIHA15N65E-GE3 vs SIHA15N60E-E3 vs SIHA15N60E

 
PartNumberSIHA15N65E-GE3SIHA15N60E-E3SIHA15N60E
DescriptionMOSFET 650V Vds 30V Vgs TO-220 FULLPAKMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current15 A15 A-
Rds On Drain Source Resistance280 mOhms280 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge96 nC38 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation34 W34 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
SeriesEE-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min5.6 S--
Fall Time25 ns33 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns51 ns-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time48 ns35 ns-
Typical Turn On Delay Time18 ns17 ns-
Packaging-Tube-
Height-15.49 mm-
Length-10.41 mm-
Width-4.7 mm-
Factory Pack Quantity-50-
Unit Weight-0.211644 oz-
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