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| PartNumber | SPB80P06P G | SPB80P06P | SPB80P06P 80P06P |
| Description | MOSFET P-Ch -60V 80A D2PAK-2 | MOSFET P-CH 60V 80A D2PAK | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | MOSFET (Metal Oxide) | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | TO-263-3, DPak (2 Leads + Tab), TO-263AB | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 23 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 115 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 340 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | SPB80P06 | SIPMOS | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 18 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | SP000096088 SPB80P06PGATMA1 SPB8P6PGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Part Status | - | Obsolete | - |
| FET Type | - | P-Channel | - |
| Drain to Source Voltage (Vdss) | - | 60V | - |
| Current Continuous Drain (Id) @ 25°C | - | 80A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | - |
| Vgs(th) (Max) @ Id | - | 4V @ 5.5mA | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 173nC @ 10V | - |
| Vgs (Max) | - | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 5033pF @ 25V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 340W (Tc) | - |
| Rds On (Max) @ Id, Vgs | - | 23 mOhm @ 64A, 10V | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PG-TO263-3-2 | - |