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| PartNumber | STL3N65M2 | STL3N10F7 | STL3N10 |
| Description | MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package | MOSFET N-channel 100 V, 0.062 Ohm typ., 4 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT-3.3x3.3-HV-8 | PowerFLAT-2x2-6 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 100 V | - |
| Id Continuous Drain Current | 2.3 A | 4 A | - |
| Rds On Drain Source Resistance | 1.6 Ohms | 70 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 4.5 V | - |
| Vgs Gate Source Voltage | 25 V | 20 V | - |
| Qg Gate Charge | 5 nC | 7.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 22 W | 2.4 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | STripFET | - |
| Packaging | Reel | Reel | Reel |
| Series | STL3N65M2 | STL3N10F7 | N-channel STripFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 21.5 ns | 4 ns | 4 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.4 ns | 3 ns | 3 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 17 ns | 11 ns | 11 ns |
| Typical Turn On Delay Time | 6 ns | 6.3 ns | 6.3 ns |
| Unit Weight | 0.048678 oz | - | - |
| Package Case | - | - | PowerFLAT-6 |
| Pd Power Dissipation | - | - | 2.4 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 4 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Rds On Drain Source Resistance | - | - | 70 mOhms |
| Qg Gate Charge | - | - | 7.8 nC |