 |  |  | |
| PartNumber | APT13005TF-G1 | APT13005T-G1 | APT13F120B |
| Description | Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A | Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A | MOSFET FG, FREDFET, 1200V, TO-247 |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | MOSFET |
| RoHS | Y | Y | Y |
| Series | APT1300 | APT1300 | - |
| Packaging | Tube | Tube | Tube |
| Brand | Diodes Incorporated | Diodes Incorporated | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | 1 |
| Subcategory | Transistors | Transistors | MOSFETs |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-220AB-3 | TO-247-3 |
| Transistor Polarity | - | NPN | N-Channel |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 450 V | - |
| Emitter Base Voltage VEBO | - | 9 V | - |
| Collector Emitter Saturation Voltage | - | 300 mV | - |
| Maximum DC Collector Current | - | 8 A | - |
| Gain Bandwidth Product fT | - | 4 MHz | - |
| Minimum Operating Temperature | - | - 65 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| DC Current Gain hFE Max | - | 35 at 1 A, 5 V | - |
| Continuous Collector Current | - | 4 A | - |
| DC Collector/Base Gain hfe Min | - | 15 | - |
| Pd Power Dissipation | - | 75 W | 625 W |
| Unit Weight | - | 0.063493 oz | 1.340411 oz |
| Technology | - | - | Si |
| Vds Drain Source Breakdown Voltage | - | - | 1.2 kV |
| Id Continuous Drain Current | - | - | 14 A |
| Rds On Drain Source Resistance | - | - | 910 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Vgs Gate Source Voltage | - | - | 30 V |
| Qg Gate Charge | - | - | 145 nC |
| Channel Mode | - | - | Enhancement |
| Tradename | - | - | POWER MOS 8 |
| Height | - | - | 5.31 mm |
| Length | - | - | 21.46 mm |
| Width | - | - | 16.26 mm |
| Forward Transconductance Min | - | - | 15 S |
| Fall Time | - | - | 24 ns |
| Rise Time | - | - | 15 ns |
| Typical Turn Off Delay Time | - | - | 85 ns |
| Typical Turn On Delay Time | - | - | 26 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
APT13005TF-G1 | Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A | |
| APT13005T-G1 | 450V NPN High Voltage Power Transisto | ||
| APT13005TF-G1 | TRANS NPN 450V 4A TO220-3 | ||
Microchip / Microsemi |
APT13GP120BG | IGBT Transistors FG, IGBT, 1200V, 13A, TO-247, RoHS | |
| APT13GP120BDQ1G | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | ||
| APT13F120B | MOSFET FG, FREDFET, 1200V, TO-247 | ||
| APT13F120S | MOSFET FG, FREDFET, 1200V, TO-268 | ||
| APT13GP120KG | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single | ||
| APT13F120B | Trans MOSFET N-CH Si 1.2KV 14A 3-Pin(3+Tab) TO-247 | ||
| APT13F120S | Trans MOSFET N-CH Si 1.2KV 14A 3-Pin(2+Tab) D3PAK | ||
| APT13GP120BDQ1G | Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247 | ||
| APT135GF2DB2D2G | New and Original | ||
| APT13GP120BDF1 | New and Original | ||
| APT13GP120BDQ1 | New and Original | ||
| APT13GP120BQG | New and Original | ||
| APT13GP120DDQ1G | New and Original |