![]() | |||
| PartNumber | APT85GR120L | APT8M100B | APT8DQ60KCTG |
| Description | IGBT Modules FG, IGBT, 1200V, 85A, TO-264 | MOSFET FG, MOSFET, 1000V, TO-247 | DIODE ARRAY GP 600V 8A TO220 |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
| Collector Emitter Saturation Voltage | 3.5 V | - | - |
| Continuous Collector Current at 25 C | 170 A | - | - |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Pd Power Dissipation | 962 W | 290 W | - |
| Package / Case | TO-264-3 | TO-247-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Through Hole | Through Hole | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Product Type | IGBT Modules | MOSFET | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | MOSFETs | - |
| Unit Weight | 0.352740 oz | 1.340411 oz | - |
| Technology | - | Si | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 1 kV | - |
| Id Continuous Drain Current | - | 8 A | - |
| Rds On Drain Source Resistance | - | 1.53 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 60 nC | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | POWER MOS 8 | - |
| Height | - | 5.31 mm | - |
| Length | - | 21.46 mm | - |
| Width | - | 16.26 mm | - |
| Forward Transconductance Min | - | 7.5 S | - |
| Fall Time | - | 7.2 ns | - |
| Rise Time | - | 7.8 ns | - |
| Typical Turn Off Delay Time | - | 29 ns | - |
| Typical Turn On Delay Time | - | 8.5 ns | - |