 |  |  | |
| PartNumber | DMC1030UFDB-13 | DMC1030UFDB | DMC1030UFDB-7 |
| Description | MOSFET MOSFETBVDSS: 8V-24V | Complementary Pair Enhancement Mode MOSFET | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | U-DFN2020-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 5.1 A, 3.9 A | - | - |
| Rds On Drain Source Resistance | 17 mOhms, 37 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV, 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 23.1 nC, 20.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.36 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 4.9 ns, 25.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns, 12.8 ns | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18.8 ns, 30.7 ns | - | - |
| Typical Turn On Delay Time | 4.4 ns, 5.6 ns | - | - |
| Unit Weight | 0.000229 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMC1030UFDBQ-7 | MOSFET MOSFET BVDSS: | |
| DMC1030UFDBQ-13 | MOSFET MOSFET BVDSS: | ||
| DMC1030UFDB-13 | MOSFET MOSFETBVDSS: 8V-24V | ||
| DMC1030UFDB | New and Original | ||
| DMC1030UFDB-7 | Complementary Pair Enhancement Mode MOSFET | ||
| DMC1030UFDBQ-13 | Trans MOSFET N/P-CH 12V 5.1A/3.9A 6-Pin UDFN EP T/R |