GT50J

GT50J101 vs GT50J102 vs GT50J102(Q)

 
PartNumberGT50J101GT50J102GT50J102(Q)
DescriptionINSTOCKIGBT, 600V, TO-3P(LH)
ManufacturerTOSHIBA--
Product CategoryIC Chips--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
GT50JR22(STA1,E,S) IGBT Transistors IGBT for Soft Switching Apps
GT50J101 INSTOCK
GT50J102 IGBT, 600V, TO-3P(LH)
GT50J102(Q) New and Original
GT50J102Q New and Original
GT50J121 New and Original
GT50J121(Q) New and Original
GT50J122 New and Original
GT50J301 New and Original
GT50J301(Q) New and Original
GT50J301Q New and Original
GT50J321 New and Original
GT50J322 New and Original
GT50J322(Q) New and Original
GT50J322,GT30J122, New and Original
GT50J322,GT30J122A New and Original
GT50J322B New and Original
GT50J322H New and Original
GT50J323 New and Original
GT50J324 New and Original
GT50J325 IGBT, 600V, TO-3P(LH), DC Collector Current:50A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:240W, Collector Emitter Voltage V(br)ceo:600V, No. of Pins:3Pins, Operat
GT50J325(Q) Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P(LH)
GT50J327 New and Original
GT50J328 New and Original
GT50J341 New and Original
GT50J342 New and Original
GT50J342,Q(O New and Original
GT50J342Q(0 New and Original
GT50JR21 IGBT N-CH 600V 50A ENHANCEMENT TO3PN, TU
GT50JR21(STA1,E,S) New and Original
GT50JR21(STA1ES) IGBTs (Alt: GT50JR21(STA1,E,S))
GT50JR21STA1 IGBT Transistors LOW SATURATION/FAST SWITCHING
GT50JR22 IGBT N-CH 600V 50A ENHANCEMENT TO3PN, EA
GT50JR22(S1WD E S New and Original
GT50JR22(S1WDES New and Original
GT50JR22(S1WLD E S New and Original
GT50JR22(S1WLD,E,STOSHIB New and Original
GT50JR22(S1WLDES New and Original
GT50JR22(STA1,E,S) New and Original
GT50JR22(STA1ES) New and Original
GT50JR22,50JR22 New and Original
GT50J121(Q)-ND New and Original
GT50J341,Q(O) IGBT Chip
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