 | |  | |
| PartNumber | IPA65R095C7XKSA1 | IPA65R095C7 | IPA65R099C6XKSA1 |
| Description | MOSFET HIGH POWER BEST IN CLASS | MOSFET HIGH POWER BEST IN CLASS | RF Bipolar Transistors MOSFET N-Ch 700V 115A TO220FP-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | TO-220FP-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 84 mOhms | 84 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 45 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 34 W | 34 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 16.15 mm | 16.15 mm | - |
| Length | 10.65 mm | 10.65 mm | - |
| Series | CoolMOS C7 | CoolMOS C7 | IPA65R099 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.85 mm | 4.85 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | 60 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | IPA65R095C7 SP001080126 | IPA65R095C7XKSA1 SP001080126 | - |
| Unit Weight | 0.211644 oz | 0.068784 oz | 0.211644 oz |
| RoHS | - | Y | - |
| Part Aliases | - | - | IPA65R099C6 IPA65R099C6XK SP000895220 |
| Package Case | - | - | TO-220-3 |
| Id Continuous Drain Current | - | - | 115 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 99 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA65R190CFD | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | |
| IPA65R125C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R190C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R150CFDXKSA1 | MOSFET N-Ch 700V 22.4A TO220FP-3 | ||
| IPA65R095C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R110CFD | MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2 | ||
| IPA65R225C7 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R150CFD | MOSFET N-Ch 700V 22.4A TO220FP-3 | ||
| IPA65R095C7 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R1K0CEXKSA1 | MOSFET CONSUMER | ||
| IPA65R1K5CEXKSA1 | MOSFET CONSUMER | ||
| IPA65R190E6 | MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6 | ||
| IPA65R190CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPA65R150CFDXKSA2 | MOSFET | ||
| IPA65R110CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPA65R190E6XKSA1 | MOSFET N-CH 650V 20.2A TO220 | ||
| IPA65R110CFDXKSA1 | MOSFET N-CH 650V 31.2A TO220 | ||
| IPA65R190CFDXKSA1 | MOSFET N-CH 650V 17.5A TO220 | ||
| IPA65R1K0CEXKSA1 | MOSFET N-CH 650V TO220-3 | ||
| IPA65R1K5CEXKSA1 | MOSFET N-CH 650V TO220-3 | ||
| IPA65R110CFDXKSA2 | HIGH POWER_LEGACY | ||
| IPA65R150CFDXKSA2 | HIGH POWER_LEGACY | ||
| IPA65R190CFDXKSA2 | HIGH POWER_LEGACY | ||
| IPA65R095C7 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R150CFD | MOSFET N-Ch 700V 22.4A TO220FP-3 | ||
| IPA65R190C6XKSA1 | MOSFET N-CH 650V 20.2A TO220 | ||
| IPA65R190CFD | Darlington Transistors MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | ||
| IPA65R095C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R125C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R190C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R099C6XKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 115A TO220FP-3 | ||
| IPA65R110CFD | RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2 | ||
| IPA65R150CFDXKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 22.4A TO220FP-3 | ||
| IPA65R190E6 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6 | ||
Infineon Technologies |
IPA65R190C6XKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPA65R110CFDXKSA1 | MOSFET HIGH POWER_LEGACY | ||
| IPA65R150CFDXK | Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IPA65R150CFDXKSA1) | ||
| IPA65R190C6 TK20A60U | New and Original | ||
| IPA65R190CFD TK17A65D | New and Original | ||
| IPA65R190CFDA | New and Original | ||
| IPA65R190DE | New and Original | ||
| IPA65R190E6 TK20A60U | New and Original | ||
| IPA65R190E6,65E6190 | New and Original | ||
| IPA65R1K0CE | New and Original | ||
| IPA65R1K5CE | New and Original | ||
| IPA65R099C6 | MOSFET N-Ch 700V 115A TO220FP-3 | ||
| IPA65R190E6(65E6190) | New and Original | ||
| IPA65R190C6 | Darlington Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS C6 | ||
| IPA65R125C7 | New and Original | ||
| IPA65R190C7 | Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |