 |  | | |
| PartNumber | IPI80CN10N G | IPI80CN10N | IPI80CN10NG |
| Description | MOSFET N-Ch 100V 13A I2PAK-3 | Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 31 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | IPI80CN10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | IPI80CN10NGAKSA1 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI80CN10N G | MOSFET N-Ch 100V 13A I2PAK-3 | |
| IPI80CN10N | New and Original | ||
Infineon Technologies |
IPI80CN10N G | MOSFET N-CH 100V 13A TO262-3 | |
| IPI80CN10NG | Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |