PartNumber | IRF7809AV | IRF7809AVPBF | IRF7809AVTR |
Description | MOSFET N-CH 30V 13.3A 8-SOIC | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | 13.3 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
Manufacturer | IR | International Rectifier | IR |
Product Category | IC Chips | Transistors - FETs, MOSFETs - Single | FETs - Single |
Packaging | - | Tube | - |
Unit Weight | - | 540 mg | - |
Mounting Style | - | SMD/SMT | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single Quad Drain Triple Source | - |
Package Case | - | SOIC-8 | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 2.5 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 36 ns | - |
Vgs Gate Source Voltage | - | 12 V | - |
Id Continuous Drain Current | - | 13.3 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 9 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 96 ns | - |
Typical Turn On Delay Time | - | 14 ns | - |
Qg Gate Charge | - | 41 nC | - |
Channel Mode | - | Enhancement | - |