IXFB

IXFB82N60P vs IXFB82N60Q3 vs IXFB80N50Q2

 
PartNumberIXFB82N60PIXFB82N60Q3IXFB80N50Q2
DescriptionMOSFET 82 Amps 600V 0.75 Ohm RdsMOSFET Q3Class HiPerFET Pwr MOSFET 600V/82AMOSFET 80 Amps 500V 0.06 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CasePLUS-264-3PLUS-264-3PLUS-264-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V500 V
Id Continuous Drain Current82 A82 A80 A
Rds On Drain Source Resistance75 mOhms75 mOhms60 mOhms
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge240 nC275 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1.25 kW1.56 kW960 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height26.59 mm-26.59 mm
Length20.29 mm-20.29 mm
SeriesIXFB82N60IXFB82N60Q3IXFB80N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHV HiPerFET Power MOSFET--
Width5.31 mm-5.31 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min50 S--
Fall Time24 ns-11 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time23 ns300 ns25 ns
Factory Pack Quantity252525
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time79 ns-60 ns
Typical Turn On Delay Time28 ns-29 ns
Unit Weight0.056438 oz0.056438 oz0.056438 oz
メーカー モデル 説明 RFQ
Littelfuse
Littelfuse
IXFB90N85X MOSFET 850V/90A Ultra Junction X-Class
IXFB82N60P MOSFET 82 Amps 600V 0.75 Ohm Rds
IXFB82N60Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
IXFB82N60P MOSFET N-CH 600V 82A PLUS 264
IXFB90N85X 850V/90A ULT JUNC X-C HIPERFET P
IXFB80N50Q2 MOSFET 80 Amps 500V 0.06 Rds
IXFB82N60Q3 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
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