| PartNumber | MUN5316DW1T1G |
| Description | Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP |
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased |
| RoHS | Y |
| Configuration | Dual |
| Transistor Polarity | NPN, PNP |
| Typical Input Resistor | 4.7 kOhms |
| Mounting Style | SMD/SMT |
| Package / Case | SC-88-6 |
| DC Collector/Base Gain hfe Min | 160 |
| Collector Emitter Voltage VCEO Max | 50 V |
| Continuous Collector Current | 0.1 A |
| Peak DC Collector Current | 100 mA |
| Pd Power Dissipation | 187 mW |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | MUN5316DW1 |
| Packaging | Reel |
| DC Current Gain hFE Max | 160 at 5 mA at 10 V |
| Height | 0.9 mm |
| Length | 2 mm |
| Width | 1.25 mm |
| Brand | ON Semiconductor |
| Number of Channels | 2 Channel |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000219 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
MUN5316DW1T1G | Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP | |
| MUN5316DW1T1G | Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP |