PBHV82

PBHV8215Z,115 vs PBHV8215Z vs PBHV8215Z115

 
PartNumberPBHV8215Z,115PBHV8215ZPBHV8215Z115
DescriptionBipolar Transistors - BJT 150V 2A NPN HI VLTG LO VCESAT TRANSISTORTRANSISTOR,NPN,2A,150V,SOT223, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:150V, Transition Frequency ft:33MHz, Power Dissipation Pd:730mW, DC Collector Current:2A, DC Current GaTrans GP BJT NPN 150V 2A 4-Pin(3+Tab) SOT-223 T/R (Alt: PBHV8215Z,115)
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max150 V--
Collector Base Voltage VCBO350 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT33 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max240--
Height1.7 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandNexperia--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min55--
Pd Power Dissipation1.45 W--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PBHV8215Z,115 Bipolar Transistors - BJT 150V 2A NPN HI VLTG LO VCESAT TRANSISTOR
PBHV8215Z,115 Bipolar Transistors - BJT 150V 2A NPN HI VLTG LO VCESAT TRANSISTOR
PBHV8215Z TRANSISTOR,NPN,2A,150V,SOT223, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:150V, Transition Frequency ft:33MHz, Power Dissipation Pd:730mW, DC Collector Current:2A, DC Current Ga
PBHV8215Z115 Trans GP BJT NPN 150V 2A 4-Pin(3+Tab) SOT-223 T/R (Alt: PBHV8215Z,115)
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