PartNumber | PHKD13N03LT,518 | PHKD13N03LT | PHKD13N03LT,118 |
Description | RF Bipolar Transistors MOSFET MOSFET N-CH TRENCH DL 30V | INSTOCK | MOSFET 2N-CH 30V 10.4A 8SOIC |
Manufacturer | NXP Semiconductors | NXP | - |
Product Category | FETs - Arrays | FETs - Arrays | - |
Series | TrenchMOS | - | - |
Packaging | Tape & Reel (TR) | - | - |
Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Supplier Device Package | 8-SO | - | - |
FET Type | 2 N-Channel (Dual) | - | - |
Power Max | 3.57W | - | - |
Drain to Source Voltage Vdss | 30V | - | - |
Input Capacitance Ciss Vds | 752pF @ 15V | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 10.4A | - | - |
Rds On Max Id Vgs | 20 mOhm @ 8A, 10V | - | - |
Vgs th Max Id | 2V @ 250μA | - | - |
Gate Charge Qg Vgs | 10.7nC @ 5V | - | - |