PartNumber | PHKD3NQ10T,518 | PHKD3NQ10T | PHKD3NQ10T518 |
Description | MOSFET PHKD3NQ10T/SO8/REEL13DP | 3 A, 100 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | - Bulk (Alt: PHKD3NQ10T518) |
Manufacturer | NXP Semiconductors | - | - |
Product Category | FETs - Arrays | - | - |
Series | TrenchMOS | - | - |
Packaging | Tape & Reel (TR) | - | - |
Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
Operating Temperature | -65°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Supplier Device Package | 8-SO | - | - |
FET Type | 2 N-Channel (Dual) | - | - |
Power Max | 2W | - | - |
Drain to Source Voltage Vdss | 100V | - | - |
Input Capacitance Ciss Vds | 633pF @ 20V | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 3A | - | - |
Rds On Max Id Vgs | 90 mOhm @ 1.5A, 10V | - | - |
Vgs th Max Id | 4V @ 1mA | - | - |
Gate Charge Qg Vgs | 21nC @ 10V | - | - |