 |  | | |
| PartNumber | PMZB350UPE,315 | PMZB350UPE | PMZB350UPE315 |
| Description | MOSFET 20 V, dual P-channel Trench MOSFET | - Bulk (Alt: PMZB350UPE315) | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-1006B-3 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 940 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 1.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 715 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 1.4 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Unit Weight | 0.000024 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMZB350UPE,315 | MOSFET 20 V, dual P-channel Trench MOSFET | |
| PMZB350UPE,315 | MOSFET P-CH 20V 1A 3DFN | ||
| PMZB350UPE | New and Original | ||
| PMZB350UPE315 | - Bulk (Alt: PMZB350UPE315) |