 |  | | |
| PartNumber | SI3127DV-T1-GE3 | SI3127 | SI3127DV |
| Description | MOSFET -60V Vds 20V Vgs TSOP-6 | ||
| Manufacturer | Vishay | Vishay / Siliconix | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | - | - |
| Length | 3.05 mm | - | - |
| Series | SI3 | - | - |
| Width | 1.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000705 oz | 0.000705 oz | - |
| Package Case | - | TSOP-6 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Pd Power Dissipation | - | 4.2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 16 ns | - |
| Rise Time | - | 6 ns | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | - 5.1 A | - |
| Vds Drain Source Breakdown Voltage | - | - 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 1 V | - |
| Rds On Drain Source Resistance | - | 146 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 35 ns | - |
| Typical Turn On Delay Time | - | 40 ns | - |
| Qg Gate Charge | - | 20 nC | - |
| Channel Mode | - | Enhancement | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3127DV-T1-GE3 | MOSFET -60V Vds 20V Vgs TSOP-6 | |
| SI3127 | New and Original | ||
| SI3127DV | New and Original | ||
| SI3127DV-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI3127DV-T1-GE3 | MOSFET P-CHAN 60V TSOP6S |